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| (R) MJ802 SILICON NPN POWER TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJ802 is a silicon Epitaxial-Base power transistor mounted in Jedec TO-3 metal case. It is intended for general purpose power amplifier and switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEO V CBO V EBO IC IB P tot T stg Tj Parameter Collector-emitter Voltage (I B = 0) Collector-base Voltage (I E = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c 25 C o Value 90 100 4 30 7.5 200 -65 to 200 200 Unit V V V A A W o o Storage Temperature Max. Operating Junction Temperature C C October 2003 1/4 MJ802 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.875 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = 100 V V CB = 100 V V EB = 4 V I C = 200 mA 90 T case = 150 o C Min. Typ. Max. 1 5 1 Unit mA mA mA V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CER(sus) Collector-emitter Sustaining Voltage (R BE = 100 ) V CE(sat) V BE(sat) V BE h FE fT Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Transition Frequency I C = 200 mA 100 V I C = 7.5 A I C = 7.5 A I C = 7.5 A I C = 7.5 A IC = 1 A f = 1 MHz I B = 0.75 A I B = 0.75 A V CE = 2 V V CE = 2 V V CE = 10 V 25 2 0.8 1.3 1.3 100 V V V MHz Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 MJ802 TO-3 MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003F 3/4 E MJ802 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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